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Advances in solid-state lighting technology recently developed

In Electronic Infomation Category: R | on April   27, 2011

A U.S.

currently in the field of solid-state lighting, considerable progress has been made since 2000, the Department of Energy R & D solid-state lighting technology has been strong, support a lot of R & D projects, made a number of achievements. The following are the important results achieved:

2008 Nian 9 Yue , CRRE company developed a standard cool white light emitting diodes, the efficiency is 107 lm / W @ 350mA.

2008 Nian 9 months, the University of Florida shows blue phosphorescent OLED, luminous efficiency of up to 40 lumens per watt, the peak external quantum efficiency of 25%. Using no external light extraction technology.

2008 Nian 6 months, and LTC1099CSW datasheet and CREE Philips jointly developed a multi-chip LED warm white aluminum reflector lamp, the efficiency is 69 lm / W, to issue 681 Lumen.

2008 Nian 6 Yue , Universal Display shows the life expectancy of 80,000 hours of the OLED. The efficiency of the OLED is 50 lm / W @ 1,000 cd/m2..

2008 Nian 6 Yue , Universal Display Corporation demonstrated a white phosphorescent OLED, the luminous efficiency reached a record 102 lm / W @ 1000 cd/m2.

2007 Nian 9 Yue , CREE developed a LED array, the efficiency is 95 lm / W @ 350 mA.

2007 Nian 9 months, General Electric Global Research Center has developed a program to deal with type (solution-processed) white OLED devices, the total peak power conversion efficiency of more than 14 %. The future goal is to develop 45 lm / W lighting-class OLED, so in the near future to replace incandescent lamps in some applications.

2007 Nian 9 Yue , Universal Display to create a 6 square inch OLED panel that can generate 100 lumens of brightness and LTC1099CSW price and efficiency of 31 lm / W, a brightness 3,000 nits. Than the current fluorescent lamp to light.

2007 Nian 6 months, Kodak has developed a new white OLED devices, the extraction efficiency of 46% over the previous devices has been greatly improved.

1.1.1 Recent studies highlight

CREE let cool white LED efficiency 107 Lm / W

; September 2008, CREE successfully developed a cool white LED, the efficiency of 107 lm / W @ 350mA. The results from the CREEs EZBright ? LED chip platform, funded by the Department of Energy. Department of Energy photonic crystal chip is part of the project, the project aims to improve the light extraction rate and LTC1099CSW suppliers and the development of new packaging technology, are higher than under the traditional LED conversion (down-conversion) efficiency. The LED has a square millimeter, a color temperature of 5500K, 73 CRI, packaged in a single module integrates four LED chips, capable of producing more than 450 lumens of luminous flux.

CREE company Philips and developed a high efficiency warm white multi-chip LED RAR (aluminum reflector) lamps

in June 2008, Philips and CREE company successfully developed a multi-chip LED RAR warm white light, the efficiency of 69 lm / W, Lumen 681 may be issued. Efficiency has been on the market than the current LED PAR lamp is much higher. The light color-rendering index of 91, belonging to customers like the warm colors ((CCT is 2716K). The outcome of a combination of packaging technology, system integration advances, there is a new efficient drive technology and a unique optical structure. The project duration 18 months, the research team will continue efforts to improve the performance of the lamp.

PNNL / NREL team demonstrated durable GZO TCO

2008 Nian 1 Yue U.S. National Renewable Energy Laboratory (NREL) and Pacific Northwest National Laboratory (PNNL) Joint demonstrates durable transparent conductive oxide, using gallium (Ga) doped zinc oxide (ZnO) (referred to as the GZO) material. GZO superior conductivity and transparency of the indium tin oxide (ITO), and is expected to reduce costs. The team demonstrated the first gallium doped ZnO the OLED device, the device characteristics of diodes with the ITO considerable. The results show a new generation TCO materials can be designed to the potential to reduce costs while enhancing performance.

Commercial development already achieved The following is funded by the Department of Energy

has been in commercial products on the market.

Chinas Olympic venues including the Birds Nest and the Water Cube with the CREEs Xlamp ? LED. CREE LED technology is applied in the development of the financial support of the Department of Energy. Installed at the Water Cube in about a 496,000 XLamp LED, red, green and blue light has. There are 258,000 in the nest room only XLamp LED, provided the stage lighting effects, CREE, and Department of Energy is continuing to improve performance, long-term goal is to develop low-cost and efficient 160 lumens per watt LED chips.

More R & D achievements in the following items in the energy funded by the Ministry of the results of other research and development

; University of Florida

high efficiency blue OLED

recently researchers at the University of Florida team shows up to peak efficiency 40 lm / W blue phosphorescent OLED, the external quantum efficiency of 25%, there is no external light extraction technology. This achievement is considered to be the highest U.S. blue OLED efficiency. Reports from the global view, the blue OLED white light on the development of OLED lighting is very important, but long life and high efficiency blue OLED has been an important obstacle. Blue OLED has the inherent charge balance, limiting its internal quantum efficiency. University of Florida team used a unique charge carrier material, with a special electronic properties. The team will continue to explore light extraction technology and the special of the down-conversion (down-convertin) phosphor with blue to produce white light OLED OLED. (September 2008)

Rensselaer Polytechnic Institute (RPI) shows high dark green LED epitaxial materials, the material on the development of red, green and blue colors, white LED is useful, in red Three green and blue LED, the deep green LED material efficiency has always been low. RPI team shows dark green wavelength 555 nm electroluminescence polar C-axis growth of GaN LED devices, 8mW power output to achieve 100 A/cm2. RPI LED active region by reducing the defects are the results, including different polar and non-polar GaN substrates.

Sandia National Laboratories demonstrates the initial bulk crystal growth R & D results

Sandia National Laboratories is developing a new, scalable, cost-effective growth technique for the production of low dislocation density (low dislocation density) of the bulk GaN substrate. The results will affect the efficiency and life of LED lights, the current related technologies is the use of sapphire and silicon carbide substrates for epitaxial method, resulting in high dislocation density. Sandia team successfully demonstrated a new bulk GaN growth process, the team will continue to develop the technology, to create a larger GaN substrates, the current lack of large substrates limits the efficiency and LED cost.

Universal Display Corporation (UDC) to improve the life of OLED

Universal Display Corporation OLED lighting researchers enhanced the feasibility of replacing conventional lighting, they demonstrate a life of eighty thousand hours of the OLED device. Present life has been plagued by the commercialization of OLED lighting. They demonstrate the OLED device efficiency 50 lm / W @ 1,000 cd/m2, the light output equivalent to 60 watt fluorescent tube, but the efficiency is twice as fluorescent tubes. UPC researchers will continue to improve the efficiency of OLED devices, color and life. (June 2008)

Universal Display has developed the efficiency of more than 100 lm / W white OLED device

UPC successfully developed a 102 lm / W @ 1000 cd/m2 of OLED devices, OLED technology is the result of a landmark, this efficiency over the current incandescent and fluorescent tubes, the efficiency of the latter two 15 lm / W and 60-90 lm / W, these techniques come from the companys proprietary phosphorescent OLED technology, the development has been the Department of Energy funding. 2015 Department of Energy goal is to develop a 150 lm / W can be commercial OLED, this achievement is undoubtedly a step towards this goal.

North Texas (North Texas) 42% of university R & D a highly efficient phosphorescent white OLED, the results are developed and made in cooperation with the University of Texas, the Energy Department hopes to develop 50% of the efficiency of the OLED, the results from this goal forward a little. The device uses a single doping substances, by changing the concentration of doping substances in the color tuning. Conventional white OLED using a variety of doping materials, each material given a color, then a variety of colors mixed with white. This is only a single material, is a major breakthrough. (May 2008)

RTI International shows light-emitting nano-fiber, with 70% quantum efficiency
RTI International demo light-emitting nanofibers (photoluminescent nanofibers), yellow or orange light, quantum efficiency of 70%. To achieve this level, RTI developed a post-fabrication process, the quantum efficiency from 30% to 70%. In the fluorescent material is a very important improvement, fluorescent material is phosphor conversion type (phosphor-converted) LED important part. LED fluorescent blue LED plus phosphor used to produce white light LED. RTI can be used as light-emitting nanofibers as yellow phosphor used, increasing the efficiency of white LED. (April 2008)

LANL Institute redefine Trap (Trap) mechanism, a new method to improve the efficiency of OLED

; Los Alamos National Laboratory (LANL) scientists completed the Department of Energy project, developed to increase the rate of charge injection and migration of new methods. They redefined the loss mechanism - known as "traps" (trap), this thing is limiting the efficiency of the device, their theoretical model, researchers in this area is helpful (for polymer and small molecule OLED), their Some results have already been incorporated into some of the Department of Energy R & D projects. UDC Department of Energy and General Electric are two important partners, develop a viable, low-cost OLED device. 2012 Department of Energy goal is to develop a 50 lm / W or more efficient OLED. (February 2008)

Fairfield Crystal Technology is making a smooth 2-inch AlN (AlN) wafer

Fairfield Crystal Technology is making a smooth 2-inch AlN (AlN) wafers, aluminum nitride wafer technology is the tremendous progress in the past has been stay in the 1-inch level. The 2-inch wafer was sent to Yale University indium gallium nitride deposition, see if large LED wafer can improve the quality of materials. The team is testing high-quality AlN wafers and high-quality materials, the relationship between the LED to enable more efficient LED. (February 2008)

PNNL in the materials design for blue OLED breakthrough performance improvement

PNNL scientists achieved a major breakthrough in low-pressure material, which is the key to producing highly efficient blue OLED materials. PNNL developed a new method of material design, in blue organic phosphor material inside the main method of transmission used (multiple transport functionalities). Hole transport the team through a combination of electronic transmission of particulate debris and synthesis of new primary material. Thermal stability is better than the material, they can also transfer electrons and holes. The team demonstrated the use of these materials by 12.6% of the external quantum efficiency @ 800 cd/m2, the 4.6V voltage, with sky-blue phosphorescent dopant. The previous result is 10.5% efficiency under 5.3V, requiring doped hole transport layer and the active layer. (January 2008)

Kodak to improve the life of the whole fluorescent white OLED

Kodak demonstrates all fluorescent white OLED, lifetime over 10,000 hours @ 1,000 cd/m2. This result is mainly due to their new device structures, the internal abstraction layer (IEL) has brought a breakthrough in extraction efficiency, the team is improving the internal quantum efficiency (IQE), light extraction, the internal operating voltage and life. Their approach emphasizes the design of non-phosphorescent, advocating only the use of phosphor molecules to get higher IQE. They will continue to improve extraction efficiency and power efficiency, these are the factors that affect the device lifetime.

Department of Energy Solid State Lighting

5 of the guidance document

core technology R & D Round V

Product Development Round V

National Laboratory V version of the core technology R & D R & D SMEs


; SME R & D II

Overall, DOE projects reviewed 126 applications for the fiscal year starting in 08 of 21 items. Fiscal year 2009 Round V of the application was about to begin.

As of December 2008, the Department of Energy to support research and development projects, made a total of 22 patents. Shows the Department of Energy-funded private sector in promoting the commercialization of solid-state lighting effect. Since 2000, the DOE-funded solid-state lighting project received a total of 90 patents. This item comes from 44 large companies, 16 small companies, 26 universities and four national laboratories. A combination of solid-state lighting


Department of Energy Solid State Lighting target objective of the study is to develop new technologies and efficient architectural lighting. Participants will work closely together to reduce lighting energy consumption.

To achieve this goal, the Department of Energy to develop a detailed product development plan to support well-known companies, research institutions, universities, industry associations and the development of national laboratories. DOE will develop solid state lighting as a priority area.

Solid-state lighting planning objectives

To 2025, develop advanced solid-state lighting technology, making it relatively traditional lighting technologies, more efficient, longer life, lower cost. Product system efficiency of 50%, similar spectral composition and light.

SSL can increase efficiency to reduce energy demand, the commercialization of solid-state lighting goal is to achieve an order of magnitude higher than the incandescent energy efficient than fluorescent tubes and high efficiency twice. The popularity of solid-state lighting will reduce the number of power stations and improve grid stability. Solid-state lighting policy and EEREs "development of energy efficient buildings and equipment" consistent with the strategic vision.

The years of the project plan was described on the project activities, covering the 09-15 fiscal year of solid-state lighting R & D program. The program is modifiable, according to new analysis, new developments and new research priorities for real-time changes.

Second, Europe

1, OSRAM white LED in the development of a major breakthrough

2008 Nian 7 22, by improving the light-emitting diode (LED) all of the production process technology, California OSRAM LED in the development of high brightness and high efficiency achieved new record , this record is the development engineers made in the lab. Under standard conditions in 350mA, reached a peak brightness of 155 lm, efficiency of 136 lm / w (lm / W).

To get this result, researchers used the chip with one square millimeter prototype white LED. Production process using a 5000K color temperature, color coordinates 0.349/0.393 (cx / cy). Osram engineers will be an optimized chip system, a very advanced and efficient solar energy converters, and unique high-performance package, all together, only to produce a record of new products. For performance excellence, Osram filed a patent application for these technologies. These semiconductor light sources also apply to the high current. At 1.4A at, they can have maximum 500 lm of white light. This means that in the future as the white LED can also be used in projection as blue and green.

2, OSRAM Opto Semiconductors refresh the warm white OLED records

March 26, 2008 - China News - OSRAM Opto Semiconductors announced that after just two years of research and development, has set a warm white organic light-emitting diode laboratory records. Organic light-emitting diode lighting devices (ie OLED lighting) of the luminous efficiency can reach 46 lm / W, brightness up to 1000 cd / square meter, as long as more than 5,000 hours of life, the first time, two key characteristics of the OLED sync upgrade.

3, published in Current Osram to 2 times the LED

2007 Nian 1 month, Osram Opto Semiconductors (OSRAM Opto Semiconductors GmbH) published a maximum operating current up to 1A, equivalent to 2 times the companys previous products, the light-emitting diode (LED) Platinum Dragon. The color may be issued, including white, blue, green, yellow, orange (amber) and red total of 6. For automotive equipment, lighting, traffic signals and other display devices and LCD panel backlight and so on. Among them, the white LED current is 700mA when connected to the beam brightness as a standard 75lm (ambient temperature 25 ℃, the measured values.) Luminous efficiency of 30lm / W. And the companys previous product "Golden Dragon" of the beam, the brightness when turned on only when the standard 350mA, 45lm. Platinum Dragon plans before the end of 2006 to begin shipping in early 2007.

4, OSRAM OSTAR Projection LED modules offer higher brightness

2007 Nian 3 months, Osram Opto Semiconductors (Osram Opto Semiconductors) introduced the new OSTAR Projection product packaging six chips, the brightness of excellence. OSTAR Projection used in the mini-projector, computer games can be created for the vibrant color effects. OSTAR Projection of the system brightness of 120 lumens, the game can be large format or display format, the content of the projector to the wall.

III, Asian

Nichia white LED luminous efficiency of 150lm / W

2007 Nian 1 month, since Japan Asia (Nichia) 1996 annual use blue LED to produce white LED phosphor excited after, LED fade into a highly efficient light sources. Nichias lamp-type LED (eg NSPWR70), in the forward drive current of 20mA, 4600K color temperature, the luminous efficiency to 150lm / W (luminous flux 9.4lm). The luminous efficiency equivalent to three-wavelength fluorescent efficiency (90lm / W), 1.7 times the incandescent lamp (13lm / W) of 11.5 times, even more than high-pressure sodium lamp (132lm / W) is also high, is considered the most promising and efficient source. GaN VCSEL

Nichia announced a major breakthrough

Nichia (Nichia) produced the first electric-pumped GaN VCSEL, can be sent at room temperature continuous wave of light. Be oriented as modified electrodes, and the sapphire substrate to remove the existing working conditions of low temperature devices based on GaN VCSEL, 410nm laser is improved. December 5 last year, published in Applied Physics Express Web site, researchers from Japan reported on the threshold current is about 13.9 kA/cm2 of GaN devices.

Previous best was a continuous wave GaN VCSEL deposited on a sapphire substrate, placed in the lateral contacts one by one, the working temperature of 77K or more. Nichia said that the device performance is limited by the characteristics of sapphire, thermal conductivity is low, the contacts close order. Yu Higuchi wrote in the report, "For the p-type and n-type contact with, the parallel structure will result in p-type table margin of current congestion phenomenon." "Current congestion as well as heat causes the operating voltage increases, VCSEL devices require high current density in particular."

Nichia LED luminous efficiency will be raised to 249lm / W

2009 Nian 2 months, the Photonics West exhibition, giants Japan Nichia LED (Nichia) shows the latest laboratory results, including a performance upgrade 3W LED and blue laser diodes attracted wide attention from participants. By accelerating the development process, LED luminous efficiency will be increased to 249lm / W @ 20mA, Nichia LED developers to capture the attention of industry. However, in the Jan. 29 organized by the Photonics West trade show this value down to 145lm / W @ 350mA, it is clear, 350mA High-brightness LED is used today to measure the output power of the drive current. In comparison, Cree and Osram recently announced the experimental LED luminous efficiency were 161lm / W @ 350mA and 136lm / W @ 350mA

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