NXP Launches Worlds most efficient three-way Doherty amplifier

Recently, NXP Semiconductors (NXP) has released the worlds most efficient three-way Doherty amplifier, the RF energy set a new standard base stations, and FDD6690A datasheet and expand the power of its industry-leading RF solutions.

The Doherty circuit patent based on NXPs unique design concept, the multi-carrier W-CDMA signal, the energy efficiency level of more than 47%, average power output of 48 dBm, gain of 15 dB, peak-to 8 dB. The design covers the current W-CDMA standard I-band frequency, specifically for high-volume, adjust the small volume manufacturing and FDD6690A price and launch.

NXP Semiconductors RF Power product marketing director Mark Murphy said: "With the innovative concept of three-way Doherty, we will be with us the advantages of Doherty amplifier optimized for the seventh generation of LDMOS Doherty technology skillfully combined to achieve the industrys highest levels of energy efficiency and FDD6690A suppliers and a good pre-distortion capabilities, while significantly saving costs. LTE and other emerging mobile communication standards that require high efficiency amplifier, Doherty technology development is in direct response to this demand of customers. In this way, as a result of the record The high efficiency and performance records, the system will significantly reduce the total power consumption. "

NXP IMS in 2009 to show off the first three-way LDMOS Doherty amplifier, as well as for microwave and radio / ISM applications of its It is high-performance products. The exhibition will be held June 9 to 11 in the United States held in Boston, Massachusetts, NXP booth number is 2403. NXP will also be 7 to 12 June 2009 held the meeting on IMS technology concepts Doherty speech.

Time to market and price

NXP is available today as three-way LDMOS Doherty amplifier samples.