Electronic information
300mm ultra-thin SOI Soitec its 22nm technology to support fully depleted devices
In Electronic Infomation Category: R | on July 10, 2011
France Soitec SOI technology provider announced that its 300mm ultra-thin SOI (UTSOI) wafer platform supports 22nm node and LT1078S8 datasheet and below, the application of fully depleted devices.
Soitec said the ability to create ultra-thin top silicon layer (20nm) SOI wafers, uniformity of up to less than 5 angstroms, and LT1078S8 price and can achieve high yield mass production.
Soitec also said that customers can develop based on the demand parameters, cost, and LT1078S8 suppliers and SOI wafers quite mainstream.
"Ultra thin body SOI for the flat area of the device provides a solid foundation for the designers under the premise of preserving the performance of substantially reducing power consumption and leakage. The technology simplifies the overall structure of CMOS technology, which reduces the cost of . "Soitec company COO Paul Boudre said.