GLOBALFOUNDRIES detail and smaller size of 22 nm advanced technology

GLOBALFOUNDRIES recently introduced an innovative technology that can be overcome to promote high-k metal gate (HKMG) transistors as a major obstacle to the industry to have more computing power and LT1172CQ datasheet and extend battery life the next generation mobile device a step further.

Is well known, the semiconductor industry has been committed to overcome seemingly insurmountable difficulties in order to extend the smaller, faster, more energy-efficient product trends. Research participation by GLOBALFOUNDRIES IBM IBM technology alliance to cooperate with the form, and LT1172CQ price and to continue to reduce the size of semiconductor devices to 22 nm node and LT1172CQ suppliers and smaller size.

In 2009, held in Kyoto, Japan, on VLSI Technology Symposium, GLOBALFOUNDRIES first demonstration of high-k metal gate enable (HKMG) transistors of the equivalent oxide thickness (EOT) down to much less than the 22 nm node the required level, while maintaining a low leakage, low threshold voltage and superior carrier mobility and other advantages of the technology.

GLOBALFOUNDRIES technology and R & D senior vice president of Gregg Bartlett, said: "HKMG GLOBALFOUNDRIES technology roadmap is a key component. This progress may eventually provide another tool to improve the performance of their products, especially in the rapidly growing with long battery life, ultra-portable notebook computers and smart phone market. alliance with IBM and partners, we leverage our global knowledge base to develop advanced technology to help our customers at the forefront of semiconductor manufacturing. "

HKMG transistor switch to maintain accuracy, the need to reduce high-k oxide equivalent oxide thickness. However, reducing leakage current EOT will increase, thereby increasing the micro-chip power consumption. GLOBALFOUNDRIES and IBM have developed to overcome this obstacle a new technology for the first time demonstrated the EOT down to well below the 22 nanometer node, while maintaining the desired leakage current, threshold voltage and carrier mobility can be achieved. EOT 0.55nm manufacturing through the use of the n-MOSFET devices and 0.7nm of EOT during the manufacture of p-MOSFET, the result has been successfully demonstrated.