The field of high-K 22nm node again flowed in. Global Foundries round dreams

Is held in Kyoto, Japan, 2009 International Conference on Semiconductor Technology (2009 Symposium on VLSI Technology) on the, Global Foundries has announced the invention enables a high-K metal gate transistors to upgrade to 22-nm technology node and LTC1387CSW datasheet and higher level.

Global Foundries can be the first time demonstrated a reduction in high-K metal gate transistor technology equivalent oxide thickness. With this technology, the company produced a 0.55nm EOT as the n-MOSFET tube and LTC1387CSW price and a EOT is 0.7nm of p-MOSFET tube.

Global Foundries is one from AMD, and LTC1387CSW suppliers and Dubai Advanced Technology Investment Co. (ATIC) to create a joint venture semiconductor manufacturing company.

The company has a factory in Germany. It also plans to invest 4.5 billion U.S. dollars in New York town of Saratoga County, Malta to create a 300mm factory. The plant is expected to be completed in 2012 with an initial monthly output running at full capacity will reach 35,000 wafers.

Global Foundries company is IBM, "fab club" members of the League. The high-K metal gate transistors in the field of research is, and IBMs "technical alliance" carried out in cooperation. The "fab club" Union said it would launch before all the other fab 32-nm node high-K metal gate technology. According to reports, the consortium will be completed in the second half of 2009 32-nanometer design and mass production in the first half of 2010.

It was reported that Tokyo Electron Limited (TEL) is to the IBM "fab club" members of the supply of high-K CVD process tools required, and the Japanese companies Canon Anelva for the IBM technology platform in the supply part of the metal gate PVD tool. Canon Anelva of PVD I-7100GT tool has been IBM, AMD, Samsung and Toshiba and other companies to install and use.

How to reduce the EOT, the node is to continue in the advanced high-K metal gate technology used by one of the main obstacles facing. Global Foundries said: "Some people have successfully reduced the EOT, but often a result of performance of the equipment."

To maintain high K metal gate transistor technology, switching accuracy, we must reduce the high K oxide EOT. GlobalFoundries company said: "We and IBM have developed the technology barriers across the new technology, the industry did not only reduce the EOT for the first time to extend to 22 nm node, while maintaining the required disclosure, threshold voltage and carrier mobility rate. "

Global Foundries companys technology and research and development senior vice president of Gregg Bartlett, said: "This technological progress will eventually allow our users to enhance the performance of their products, especially in the longer battery life, is in the rapidly growing ultra-portable notebook computers and smart phone market. "