Began in 1998 in a joint process technology development based border=0> To address these challenges, the new 32nmSoC process using a newly developed metal / high dielectric constant (high-k) gate stack (gatestack) Structure transistor technology and TDA5737M datasheet and interconnect technology, using a new type of ultra-low dielectric constant (ultra-low-k) material. In order to achieve the 32nm node using complementary metal-insulator semiconductor (CMIS) technology, device, or a complementary metal oxide semiconductor (CMOS), under optimized conditions at the atomic level of metal / high-k gate stack structure of the transistor applications ultra-thin film coatings (caplayer). This will help to use a layer of silicon oxide film as the gate insulation layer to achieve the common development of the transisto...
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